WIDERSTAND MIT GESTEUERT EINSTELLBARER GROESSE

摘要

A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respectively on opposite sides of the conductive path of the resistor, whereby the width of the resistor is defined by the extent of the additional regions into the first region. Where the monolithic semiconductor device comprises an integrated circuit device including a lateral transistor, the additional regions may be formed simultaneously with the emitter and collector regions of the transistor while utilizing the same doping mask, whereby any variation in the base width of the transistor is made proportional to the variation in the width of the resistor. Such a resistor has a value proportional to the beta of the transistor and may be utilized with circuit means for connecting the resistor with the transistor to compensate for a variation in the base width of the transistor.