| 摘要 |
A read-only memory is manufactured from a matrix or array of multilayer electrical devices, each of which includes at least one metallic layer, a portion of which contacts a doped semi conductor region. The metallic layers are controllably and rapidly thinned down and decreased in cross-sectional area in the vicinity of the doped regions to form fusible links, thus producing a ROM starting product. Fusible link formation is enhanced by the use of an etchant for the metallic layer which forms an electrochemical cell in conjunction therewith and with the semiconductor and the doped region. Any metallic layers not contacting a doped region are also etched by the etchant, but at the much slower "chemical rate". Following the production of the starting product, a ROM may be produced by the selective application of voltages to selected fusible links, the I2R heating of the links fusing them, or blowing them out. In a preferred embodiment, the electrical devices are MOSFETS.
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