| 摘要 |
1498531 Integrated injection logic cell WESTERN ELECTRIC CO Inc 25 April 1975 [26 April 1974] 17198/75 Heading H1K An integrated injection logic cell comprises switching and injection transistors formed in portions of an n-type epitaxial layer 12 on an n<SP>+</SP> substrate 11 laterally surrounded by inset oxide 13a, b, c extending partly through the thickness of the epitaxial layer 12. P-type regions 16, 17 are formed in the laterally surrounded portions of layer 12, preferably by a two stage ion implantation producing two overlapping peaked dopant distributions, one shallow and highly concentrated and the other deeper and of lower concentration, and an n-type region 20 is formed in the region 16, preferably by diffusion of dopant from a polycrystalline Si layer 19 which forms part of a first metallization level. The switching transistor is constituted by epitaxial layer 12 (emitter), region 16 (base) and region 20 (collector), while the injection transistor is constituted by region 17 (emitter), epitaxial layer 12 (base) and region 16 (collector). Second level metallization 22-26 completes the cell. |
