发明名称 |
REPLACEMENT MATERIALS PROCESSES FOR FORMING CROSS POINT MEMORY |
摘要 |
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material. |
申请公布号 |
SG11201607826S(A) |
申请公布日期 |
2016.10.28 |
申请号 |
SG11201607826S |
申请日期 |
2015.03.25 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LEE, JONG-WON;SPADINI, GIANPAOLO;RUSSELL, STEPHEN, W.;KAU, DERCHANG |
分类号 |
H01L21/8239 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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