Plasma treatment esp. of semiconductor substrates - which rest on a temp. controlled plate in the treatment chamber

摘要

Plasma treatment or etching is employed to remove material from a substrate resting on a plate (I) during a plasma discharge. (I) can be cooled and/or heated, and is in thermal contact with the substrates so their temp. can be controlled during the process. (I) pref. contains a pipe through which a heating or cooling fluid can flow; and is pref. made of the same material as the perforated tunnel used for plasma attack, e.g. Al. Used in the mfr. of semiconductors, for etching substrates and/or for removing layers of photoresist from their surfaces. The temp. of the substrates before and during etching is effectively controlled.