| 摘要 |
<p>1521879 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 13 June 1977 [2 July 1976] 24596/77 Heading H1K Before the emitter zone is formed in a base zone 13 of a bipolar transistor, nucleation sites 19 for crystallographic defects such as dislocation loops are formed near the surface of the base region. The nucleation sites 19 may be formed by ion implanting inert gases, Si or O or as mechanical or laser induced damage. The transistor is formed by As, P, Sb and B doping a Si substrate. When the emitter is subsequently formed by diffusion, the nucleation sites are converted into electrically harmless dislocation loops.</p> |
