| 摘要 |
1525182 Liquid phase epitaxy NORTH AMERICAN PHILIPS CORP 27 May 1976 [30 May 1975] 22058/76 Heading B1S In liquid-phase epitaxial deposition from a solution 18 on to a substrate wafer 19 which is a Ga-centaining Group III-V compound, electric current is passed across the liquid-solid interface via an intermediate layer 21 which is below the substrate and which is liquid Ga containing at least 0.5% Al. Current passes between steel electrodes 10, 11 embedded in graphite blocks 12. 13 and through graphite plug 24 and graphite pedestal 22. In operation slids 14 of insulating material e.g. BN is moved to align hole 20 with substrate 19 to allow contact with solution 18 and to allow current to pass. The substrate may be GaAs, GaP, GaAsP, Ga 1-x Al x , As or Ga 1-x Al x P, and may be doped with Si.
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