发明名称 |
Hetero-structure injection laser |
摘要 |
A semiconductor laser having a structure such that a narrow strip mesa is formed above a laser active layer in a hetero-structure crystal so that it can generate a laser beam of improved optical property.
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申请公布号 |
US4142160(A) |
申请公布日期 |
1979.02.27 |
申请号 |
US19750612103 |
申请日期 |
1975.09.10 |
申请人 |
HITACHI, LTD. |
发明人 |
TSUKADA, TOSHIHISA;CHINONE, NAOKI;NAKAMURA, SATOSHI;ITO, RYOICHI |
分类号 |
H01L21/00;H01L33/00;H01S5/22;H01S5/40;(IPC1-7):H01S3/19 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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