Silicon semiconductor sepn. from reacting gases - watched using inspection tube with window protruding into reaction chamber with electrodes which avoids opacity developing on window surface

摘要

Semiconductor material esp. Si is deposited on a heated carrier from a reaction gas contg. a halogen cpd. and H2. The device consists of a base plate with a dome made from quartz, glass, "rotosil" or steel over it. The plate has openings for the reaction gas to enter and leavy by and a mounting for the support plate electrode. There is also a tube protruding into the reaction space which has an observation window. The window is located at a distance from the end of the tube such that condensation onto its is virtually eliminated. The tube is made of the same material as the base plate and the window is of quartz. Used for mfg. si semiconductors. Avoids the problems with previous windows which become obscured due to material condensing out on them and preventing viewing.