| 摘要 |
<p>The programmable matrix memory includes at each point a transistor with its collector at a reference potential, a fuse in series with the connection between emitter and one of a first series of conductors, and its base connected to one of a second group of conductors. For selection of points for programming or reading a current is applied to one of the first conductors, and a high potential is applied to one of the second conductors. Transistor switches vary the intensity of the current between a programming, and lower value reading current. The potential applied is similarly varied. Teh memory operates by selective breaking of the fuses in the matrix by the programming current and voltage.</p> |
