| 摘要 |
A method for fabricating the P-N junction which was grown by liquid phase epitaxty(LPE) process in which a p-type Zn-O doped layer (13), partially compensated by addition of the donor Te grown on n-type Gap layer(12), and annealing the resultant junction at a cooling rate below 5≦̸C/min. The electroluminesent efficiency of the surface donor concentration was below 1× 1018cm-3, and doping profiles in this substrate(11) were determined by using surface barrier capacitance measurement.
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