Semiconductor with capacity reducing region - in pt. of pn-junction under contact zone to avoid impaired frequency characteristics

摘要

Semiconductor device with pn-junction(s) has a contact to one of the semiconductor zones froming the junction through a contact zone, which is lower ohmic than the semiconductor zone to be contacted. Below this contact zone, there is a region reducing the capacity of the pt. of the pn-junction under the contact zone or ensuring that there is no pn-junction in the region below the contact zone.