Method of manufacturing red light-emitting gallium phosphide device

摘要

A red light-emitting gallium phosphide device of high electroluminescent efficiency which comprises an n-type gallium phosphide substrate containing a donor at concentrations ranging from 1x1017 cm-3 to 3x1017 cm-3, an n-type gallium phosphide layer formed on said substrate with a donor concentration in the neighborhood of a p-n junction set at a level ranging from 2x1017 cm-3 to 5.5x1017 cm-3 and a p-type gallium phosphide layer grown on said n-type gallium phosphide layer with a net acceptor concentration and an oxygen donor concentration in the neighborhood of the p-n junction chosen to range from 1x1017 cm-3 to 3x1017 cm-3 and 0.1x1016 cm-3 to 8x1016 cm-3, respectively.