Schottky diode with suppression of field emission in barrier region - by surrounding Schottky contact with dielectric zone, esp. of silica

摘要

The diode has a semiconductor substrate (1) of one conductivity type and covered by an epitaxial layer (2) of the same conductivity type. On top of layer (2) is a metal electrode (4) forming the Schottky contact, and a protective zone (3) formed by a dielectric and suppressing field emission in the barrier region. Zone (3) is an oxide of the semiconductor material and is partly embedded in layer (2). The depth of zone (3) is layer (2) is pref. at lest equal to the extent of the space charge caused by the max. voltage when the diode is operated in the reverse direction. Substrate (1) is pref. a n-doped Si, whereas layer (4) is pref. Al plus Ni; and substrate (1) is pref. oriented in the 111 direction. This diode is much simpler to mfr. than similar conventional diodes.