| 摘要 |
PURPOSE:To reduce the sustaining current for an amplifying thyristor and to increase the controllable current for a main thyristor by varying the base width of the base region in a main thyristor portion and an amplifying thyristor portion. CONSTITUTION:A cathod electrode 1 is provided on a main surface, a gate electrode 2 is provided in the semiconductor layer having a conduction reverse to that of other semiconductor layer immediately under the electrode 1, and further an anode electrode 7 is provided in the other main surface. A slot 10 is interposed between the electrode 1 and 2, the semiconductor layer having the same conduction as the semiconductor immediately under the electrode 1 in the slot 10 and a supplementary gate electrode 8 is interposed between this semiconductor region and the semiconductor region immediately under the electrode 2. Whereby the sustaining current of the amplifying thyristor can be reduced and the controllable current of the main thyristor be increased. |
