SETT ATT KLYVA HALVLEDARDIODLASERPLATTOR

摘要

A substrate 10 having epitaxial layers 11, 12, 13, 14 forming double heterostructure lasers is subdivided by anisotropically etching V-grooves 22 in the lower face of the substrate and then mechanically cleaving or breaking along lines 20. The resulting bars are scribed and broken along lines 23 to form individual laser diodes. When the wafer is 3 to 5 mils thick the V-grooves preferably extend to 1 to 2 mils less than thickness of the wafer. When the wafer is 6 to 10 mils thick preferably a parallel-sided channel is first formed followed by V-grooving. The method results in cleaved faces with little mechanical damage in the active area and produces diode lasers of uniform length.