| 摘要 |
<p>A one transistor, one capacitance type dynamic MOS·RAM is provided with a buried storage capacitor and a planar transfer electrode. The MOS·RAM is, therefore, characterised by a small size of the memory cells and a simple production process. One process feature of the present invention is that fast diffusion through polycrystalline silicon is employed for forming a vertical connection (11a) between the buried storage capacitor (1,2) and the source or drain (27,28) of the MOS transistor.</p> |
