| 摘要 |
CADMIUM TELLURIDE COMPENSATED BY MAGNESIUM OR BERYLLIUM WHICH MAY BE DOPED AND ITS APPLICATIONS Cadmium telluride forming a single-crystal intrinsic semiconductor having high resistivity contains at least one metal selected from the group comprising beryllium and magnesium having a concentration of less than 5 x 1020 atoms per cm3 as well as a doping agent selected from the group comprising the chloride of cadmium, zinc, magnesium, beryllium and aluminum and is employed in the fabrication of infrared windows or quantum detectors. |
