| 摘要 |
The method comprises depositing charges of a selected polarity on the areas coated with isulating material of a semiconductor device having areas of "bare" semiconductor and areas coated with insulating material, immersing the charged device in a liquid composition comprising an insulating liquid and dispersed glass particles carrying a charge of particular polarity so that the glass particles may deposite selectively either onthe bare areas of semiconductor or on the areas coated with insulator, and removing the glass-coated device from the liquid compositon, drying and firing the coated device at a temp. enough to fuse th glass.
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