| 摘要 |
PURPOSE:To increase the refractive index of the center part and improve the light output characteristics by a method wherein a thin clad layer is formed, via an active layer, on a clad layer provided on a substrate, and on top of this is provided a waveguide layer, surrounded by a loss layer, while the width of a light emitting region and the width of current injection are being adjusted. CONSTITUTION:An n-type InP clad layer 2, In0.76Ga0.24As0.55P0.45 active layer 3, and thin InP clad layer 4 are grown in laminate on n-type InP substrate 1 having face (100). Further, InGaAsP loss layer 5 of the same composition as layer 3 is grown on top of this, and corresponding to width W of the light emitting region, layer 5 is removed by selective etching. Next, while this etched region is being filled, p-type InP waveguide layer 6 is grown on the entire surface. This is again covered with contact layer 9 of the same composition as layer 3. Then, by proton injection, a current blocking region is formed on both ends of layers 9 and 6, sandwiching region S, which is slightly wider than width W of the light emitting region. Subsequently, AuZn electrode 7 is fitted on layer 9, and AuZn electrode 8 on the back of substrate 1. |
