Semiconductor device and method for fabricating semiconductor device

摘要

A semiconductor device includes a first electrode layer and a second electrode layer disposed over a substrate, a first insulating layer disposed over the first electrode layer, and a reflective electrode layer disposed on the first insulating layer and electrically connected to the first electrode layer, wherein the second electrode layer is exposed externally, and a thickness of the second electrode layer is greater than a thickness of the reflective electrode layer.

主权项

1. A semiconductor device fabrication method comprising:
forming a first electrode layer and a second electrode layer over a substrate; forming a first insulating layer on the first electrode layer and second electrode layer; forming a reflective electrode layer, that is electrically connected to the first electrode layer, on the first insulating layer; forming a second insulating layer on the reflective electrode layer and a portion of the first insulating layer above the second electrode layer; exposing the second electrode layer by etching the second insulating layer and the first insulating layer located above the second electrode layer with the second insulating layer left on the reflective electrode layer; and after exposing the second electrode layer, exposing the reflective electrode layer by etching the second insulating layer located on the reflective electrode layer.