发明名称 |
X-ray detector |
摘要 |
An X-ray detector may include: a thin film transistor (TFT) unit; and/or a capacitor unit. The capacitor unit may include two or more storage capacitors. The TFT unit may include: a gate electrode on one region of a substrate; a gate insulating layer on the gate electrode; an active layer on the gate insulating layer; and/or a source electrode and a drain electrode respectively on sides of the active layer. |
申请公布号 |
US9470803(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201514725429 |
申请日期 |
2015.05.29 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Jaechul;Kim Sunil;Lee Dongwook;Lee Changbum |
分类号 |
G01T1/24;H01L31/0272;H01L31/032;H01L27/146 |
主分类号 |
G01T1/24 |
代理机构 |
|
代理人 |
|
主权项 |
1. An X-ray detector, comprising:
a thin film transistor (TFT) unit, wherein the TFT unit comprises a source electrode and a drain electrode; a capacitor unit, wherein the capacitor unit comprises two or more storage capacitors and a collection electrode, wherein the collection electrode extends onto the source electrode and the drain electrode; and a passivation layer between the collection electrode and the source and drain electrodes. |
地址 |
Suwon-si KR |