发明名称 X-ray detector
摘要 An X-ray detector may include: a thin film transistor (TFT) unit; and/or a capacitor unit. The capacitor unit may include two or more storage capacitors. The TFT unit may include: a gate electrode on one region of a substrate; a gate insulating layer on the gate electrode; an active layer on the gate insulating layer; and/or a source electrode and a drain electrode respectively on sides of the active layer.
申请公布号 US9470803(B2) 申请公布日期 2016.10.18
申请号 US201514725429 申请日期 2015.05.29
申请人 Samsung Electronics Co., Ltd. 发明人 Park Jaechul;Kim Sunil;Lee Dongwook;Lee Changbum
分类号 G01T1/24;H01L31/0272;H01L31/032;H01L27/146 主分类号 G01T1/24
代理机构 代理人
主权项 1. An X-ray detector, comprising: a thin film transistor (TFT) unit, wherein the TFT unit comprises a source electrode and a drain electrode; a capacitor unit, wherein the capacitor unit comprises two or more storage capacitors and a collection electrode, wherein the collection electrode extends onto the source electrode and the drain electrode; and a passivation layer between the collection electrode and the source and drain electrodes.
地址 Suwon-si KR