| 发明名称 |
METHOD OF OVERLAY IN EXTREME ULTRA-VIOLET (EUV) LITHOGRAPHY |
| 摘要 |
The present disclosure relates to a deformable reticle chuck. In some embodiments, an extreme ultraviolet (EUV) deformable reticle chuck has a substrate of insulating material with a plurality of protrusions extending outward from a first side of the substrate. A resistive material is arranged along a second side of the substrate below the plurality of protrusions. The resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle. |
| 申请公布号 |
US2016306285(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615191831 |
申请日期 |
2016.06.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Huang Chia-Ching;Hsu Chia-Hao;Chen Chia-Chen |
| 分类号 |
G03F7/20;C23C16/56;C23C16/04;H01L21/683;C23C16/34 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An extreme ultraviolet (EUV) deformable reticle chuck, comprising:
a substrate of insulating material comprising a plurality of protrusions extending outward from a first side of the substrate; and a resistive material arranged along a second side of the substrate below the plurality of protrusions, wherein the resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle. |
| 地址 |
Hsin-Chu TW |
