发明名称 |
LSI Semiconductor device and fabrication thereof |
摘要 |
Disclosed is an improved masterslice design technique including structure, wiring, and method of fabricating, to provide improved Large Scale Integrated Devices. In accordance with the improved masterslice technique a plurality of semiconductor chips are provided wherein essentially the entire semiconductor surface area of each chip is utilized to provide cells selectable to be personalized (wired). None of the semiconductor surface area is dedicated for wiring channels. The individual cell area and cell configuration is optimally arrived at to facilitate wiring the maximum number, if not all of the cells contained on each chip, whereby circuit density is materially improved and a wide variety LSI device part numbers may be readily fabricated.
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申请公布号 |
US4249193(A) |
申请公布日期 |
1981.02.03 |
申请号 |
US19780909605 |
申请日期 |
1978.05.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BALYOZ, JOHN;CHANG, CHI S.;FOX, BARRY C.;PALMIERI, JOHN A.;GHAFGHAICHI, MAJID;JEN, TEH-SEN;MOONEY, DONALD B. |
分类号 |
H01L21/822;H01L21/3205;H01L21/82;H01L23/52;H01L23/528;H01L27/04;H01L27/118;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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