| 摘要 |
PURPOSE:To easily permit the detection of minute defects for the whole region of a semiconductor chip with uniformity and high sensitivity by exposing the major surface of the semiconductor element chip wherein the remaining parts are closely buried in a conductive substance. CONSTITUTION:The semiconductor chip 100 is buried in the conductive substance 4 by exposing only the major surface 100a of the semiconductor element chip 100. Next, an insulating spacer 6 having an aperture 6a is installed on the upper side of the conductive substance 4. Then, a nematic liquid crystal film 7 is formed in the aperture 6a of the insulating spacer 6. A DC voltage 13 is applied across a metal plate 5 and an electrode 11 while observing the major surface of the semiconductor chip 100 through a glass plate 8 with a transparent conductive film and the nematic liquid crystal film 7 by an optical microscope 12. |
