| 摘要 |
PURPOSE:To implant ion beams without contamination by preparing a process to obstruct and remove contaminants which are generated in an ion beam analyzing part and come flying to an ion implanting part owing to diffusion in vacuum at the time of ion implantation. CONSTITUTION:Implanting ion beams 16 and contaminants 15 that come flying are both introduced to a deflecting part 18 with a wide entrance, and the ion beams 16 are deflected so that they may go out of the deflecting part. At the exit of the deflecting part, a slit 17 is installed to throttle the exit so that the contaminants 15 may be reflected inside, may stick to the wall and the slit of the deflecting part and may not go to the direction of the ion beams 16. By so doing, detrimental contaminants are removed and required ion beams alone can be used for implantation. |
