| 摘要 |
PURPOSE:To improve the dampproofness of the semiconductor device and to extend life by using an oxide film containing specific high density P2O5 as an insulator forming a wiring layer on the oxide film. CONSTITUTION:A high density phosphorus glass layer 6 is formed on a field oxide film, a gate oxide film and a gate electrode which are provided on a silicon substrate 1. After making holes for contact on the layer 6, a vapor growth oxide film 7 (Especially, SiO2) containing P2O5 with 0.4-9mol% is formed. And heat treatment is made at 900-1,000 deg.C to minute the oxide film. After making holes for contact, an aluminum wiring 8 is formed by aluminum evaporation. Finally, the parts except a bonding pad section are covered with a vapor growth oxide film 9 containing P2O5 with 0.4-9mol%. In this way, the dampproofness of a device will be improved and life will also be extended. Especially, P2O5 of the vapor growth oxide film with 1-7mol% density permits full fruit. |
