| 摘要 |
PURPOSE:To reduce the expansion of a laser light beam fo a semiconductor laser device and to conduct operation in high power of laser oscillation thereof by forming a light waveguide in the vicinity of an active region for oscillating laser light. CONSTITUTION:The refractive index of a GaAs layer 3 is the largest one, that of a Ga0.93Al0.07 layer 11 is next larger, and that of Ga0.7Al0.3As layers 2, 4, 10, 12 are the amallest ones. On the other hand, the inhibited band-width of the layer 3 is the narrowest one, that of the layer 11 is next, and that of the layers 2, 4, 10, 12 are the widest ones. The laser light rays are leaked from the active region 3b to a P type Ga0.93Al0.07As layer 11b, and are leaked out and propagated in the layer 11b. |
