发明名称 HIGH DENSITY INTEGRATED LOGIC CIRCUIT
摘要 <p>HIGH DENSITY INTEGRATED LOGIC CIRCUIT The disclosed logic circuit includes one transistor and a plurality of Schottky barrier diodes in each logic circuit "cell", a plurality of such cells being interconnected to perform desired logic functions. Cell interconnections are made by interconnecting metallurgy which can have a relatively high resistance with relatively long interconnecting paths between a sending circuit cell and a receiving circuit cell. The undesirable effects of this metallurgy resistance are overcome by driving the base of the receiving transistor through a base drive resistor in the sending cell.</p>
申请公布号 CA1100647(A) 申请公布日期 1981.05.05
申请号 CA19780309381 申请日期 1978.08.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人
分类号 H03K19/08;H03K19/082;H03K19/12;H03K19/173;H03K19/20 主分类号 H03K19/08
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