发明名称 |
HIGH DENSITY INTEGRATED LOGIC CIRCUIT |
摘要 |
<p>HIGH DENSITY INTEGRATED LOGIC CIRCUIT The disclosed logic circuit includes one transistor and a plurality of Schottky barrier diodes in each logic circuit "cell", a plurality of such cells being interconnected to perform desired logic functions. Cell interconnections are made by interconnecting metallurgy which can have a relatively high resistance with relatively long interconnecting paths between a sending circuit cell and a receiving circuit cell. The undesirable effects of this metallurgy resistance are overcome by driving the base of the receiving transistor through a base drive resistor in the sending cell.</p> |
申请公布号 |
CA1100647(A) |
申请公布日期 |
1981.05.05 |
申请号 |
CA19780309381 |
申请日期 |
1978.08.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
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分类号 |
H03K19/08;H03K19/082;H03K19/12;H03K19/173;H03K19/20 |
主分类号 |
H03K19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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