Semiconductor device and method of forming openings in thermally-conductive frame of FO-WLCSP to dissipate heat and reduce package height

摘要

A semiconductor device has a thermally-conductive frame and interconnect structure formed over the frame. The interconnect structure has an electrical conduction path and thermal conduction path. A first semiconductor die is mounted to the electrical conduction path and thermal conduction path of the interconnect structure. A portion of a back surface of the first die is removed by grinding. An EMI shielding layer can be formed over the first die. The first die can be mounted in a recess of the thermally-conductive frame. An opening is formed in the thermally-conductive frame extending to the electrical conduction path of the interconnect structure. A second semiconductor die is mounted over the thermally-conductive frame opposite the first die. The second die is electrically connected to the interconnect structure using a bump disposed in the opening of the thermally-conductive frame.

主权项

1. A method of making a semiconductor device, comprising:
providing a thermally-conductive frame; forming an opening through the thermally-conductive frame; depositing a sacrificial material in the opening of the thermally-conductive frame; forming an interconnect structure over the thermally-conductive frame, the interconnect structure including an electrical conduction path and thermal conduction path; mounting a first semiconductor die to the electrical conduction path and thermal conduction path of the interconnect structure; removing the sacrificial material from the opening of the thermally-conductive frame; and mounting a second semiconductor die over a surface of the thermally-conductive frame opposite the first semiconductor die, the second semiconductor die being electrically connected to the interconnect structure using a first bump disposed in the opening of the thermally-conductive frame.