| 摘要 |
PURPOSE:To obtain a single axis mode oscillation laser having small oscillation threshold current by burying the end face of the active layer in the end face buried type semiconductor laser with a layer having large forbidden band width and incorporating the wavelength selecting function in the light waveguide layer. CONSTITUTION:An N type Al0.3Ga0.7As clad layer 12 and an N type Al0.13Ga0.85As light waveguide layer 13 are formed in stripe shape on an N type GaAs semiconductor substrate 11. A P type GaAs active layer 14 and a P type Al0.3Ga0.7As clad layer 15 are formed in stripe shape on the region isolated from the end face of the light emitting surface on the layer 13. Further, an N type Al0.3Ga0.7As clad layer 17 is formed so as to surround the layers 12, 13, 14, 15 excluding the end face of the light emitting surface of the layer 13. The boundary surface 16 between the layers 13 and 16 is formed unevenly having periodic property with wavelength selecting function. |
