| 摘要 |
PURPOSE:To process a fine pattern by performing offset exposure while using the same aligner and the same photomask. CONSTITUTION:A photoresist 13 is applied on the SiO2 film 12 of an Si substrate 11. Positioning is made by an aligner after providing a pattern 14 with larger dimensions than desired ones to a photomask 15. The large-sized pattern 14 is printed by the first ultraviolet ray exposure. Interference is completely eliminated because of its large size. Next, the mask 15 is offsetted in a 45 deg. direction for exposure. In this case, the interference by diffraction is similarly and completely eliminated and a piled nonexposed part 16 becomes a desired fine pattern. A fine pattern process is completed by eliminating the resist 13 at the part 16 and by etching the exposed SiO2 film 12. In this composition, pinholes caused by the dirt of the photomask and the projection of defects will also be eliminated and a fine pattern will be processed. |
