| 摘要 |
Gold (a) and at least one metal (b) which is Zr, Nb, and/or Hf, are deposited on the substrate, followed by heating at 200-500 degrees C., pref. for 1-100 h, to form a cpd. (a,b). Masking and selective removal of the cpd. (a,b) is then used to form the conductor strip. The pref. substrate is suitable for mfg. magnetic bubble memories. Deposition pref. occurs in a vacuum harder than 10-5 torr total pressure in the absence of oxygen; or via cathodic sputtering in inert gas using high frequency of 500-2000 V and d.c. bias of 0-200 V. The strip pref. uses a bottom and top layer of cpd. (a,b), with a middle layer of gold. The min. dimension of the strip is pref. below 0.015 mm. Method is used to minimise electromigration on silicon semiconductor substrates carrying integrated circuits, and on garnet substrate for bubble memories. - |
