Optical Schottky-type detector device

摘要

The optical Schottky-type detector device described comprises a p'-type silicon substrate (10), an electrode (12) which is formed by a metal side of a Schottky junction which has been formed by vacuum vapour deposition of platinum or platinum silicide on a predetermined portion of the principal surface of the substrate (10), and an isolating zone (16) on the principal surface of the substrate (10) around the Schottky junction. Situated on the isolating zone (16) is an electrically conducting take-off lead (18), one end of which is only connected to a portion of the electrode (12) at its circumference. In a special embodiment, one end or side of an electrically conducting layer (18) on the isolating zone (16) is connected to the entire circumference of the electrode (12), thereby defining an opening (26) via which the electrode (12) can be directly exposed to infrared radiation. <IMAGE>