| 摘要 |
PURPOSE:To obtain a solar cell with high conversion efficiency by a method wherein a unit cell of N-I-P type amorphous Si is sandwiched between two transparent electrode layers and a plurality of such structures are formed and series- connected on an insulating substrate. CONSTITUTION:Transparent electrodes 11, 21, 31 of InO-Sn are formed separately on a glass substrate 1 and amorphous Si layers 12, 22, 32 are piled selectively by glow-discharge decomposition. Al is deposited to form electrodes 13, 23, 33 selectively which portially overlap the transparent electrodes. Each amorphous Si layer consists of P-layers 16, 28 which contains 0.05-1% of B and is 50- 500Angstrom thick, I-layers 17, 27 which contains 0.001-0.1% of P or B and N-layers 18, 28 which contains 0.01-5% of P and is 50-5,000Angstrom thick and the I-layer 27 is thinner than the I-layer 17. With above configuration, a photoelectromotive element which has high photoelectric conversion efficiency which is not reduced significantly even if the area is so large, has high output voltage even if the area is limited and has little deviation can be obtained. |
