发明名称 |
Binary germanium-silicon interconnect structure for integrated circuits. |
摘要 |
<p>An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.</p> |
申请公布号 |
EP0061388(A2) |
申请公布日期 |
1982.09.29 |
申请号 |
EP19820400449 |
申请日期 |
1982.03.12 |
申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
LEHRER, WILLIAM I.;DEAL, BRUCE E. |
分类号 |
H01L29/78;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L29/43;(IPC1-7):01L23/52;01L29/40;01L21/88;01L21/24 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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