发明名称 Method for inspecting polysilicon layer
摘要 A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.
申请公布号 US9464991(B2) 申请公布日期 2016.10.11
申请号 US201314094051 申请日期 2013.12.02
申请人 Samsung Display Co., Ltd. 发明人 Voronov Alexander;Lee Suk-Ho;Yoo Jae-Seung;Heo Kyung-Hoe;Han Gyoo-Wan
分类号 G01N21/64;G01N21/95 主分类号 G01N21/64
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A method for inspecting a polysilicon layer, comprising: radiating excitation light onto the polysilicon layer; and detecting a photoluminescence signal generated in the polysilicon layer by the excitation light, wherein: the excitation light has an average power in a range of 1 W/cm2 to 10 W/cm2; a peak power of the excitation light is in a range of 300 W/cm2 to 500 W/cm2; and the polysilicon layer has a thickness in a range of 1 nm to 300 nm.
地址 Yongin-si KR