发明名称 |
Method for inspecting polysilicon layer |
摘要 |
A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2. |
申请公布号 |
US9464991(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201314094051 |
申请日期 |
2013.12.02 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Voronov Alexander;Lee Suk-Ho;Yoo Jae-Seung;Heo Kyung-Hoe;Han Gyoo-Wan |
分类号 |
G01N21/64;G01N21/95 |
主分类号 |
G01N21/64 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A method for inspecting a polysilicon layer, comprising:
radiating excitation light onto the polysilicon layer; and detecting a photoluminescence signal generated in the polysilicon layer by the excitation light, wherein: the excitation light has an average power in a range of 1 W/cm2 to 10 W/cm2; a peak power of the excitation light is in a range of 300 W/cm2 to 500 W/cm2; and the polysilicon layer has a thickness in a range of 1 nm to 300 nm. |
地址 |
Yongin-si KR |