| 摘要 |
PURPOSE:To form stabilized film quality being free from effect of temperature rise during formation of a thin film by lift-off of a dielectric film using a metallic oxide film which is previously formed and is soluble in alkaline solution. CONSTITUTION:A metallic oxide film 13 is deposited by dipping or spin coating on an insulating film 12 of SiO2 formed on a silicon substrate 11 as shown in Fig. (a) and is heat treated. WO3 is suitable for the metallic oxide film 13 because it is highly heat resistive and easily soluble in alkaline solution such as KOH. Then, a lower electrode layer 15, dielectric thin film 6 and an upper electrode layer 17 are formed successively including an opening 13a for formation of the said pattern on the metallic oxide film 13 with the said photoresist 14 stripped as shown in Fig. (b). After this, the said substrate 11 is dipped in KOH solution to solve the metallic oxide layer 13 so that the electrode layers 15, 17 and dielectric thin film 16 can be lifted off to produce a finely processed pattern of the dielectric thin film 16 as shown in Fig. (c). |
