发明名称 Method of making multi-megohm thin film resistors
摘要 A geometry and method of fabricating thin film resistors which are tolerant of faults in the film and therefore permit attainment of high resistances. The resistor includes a series of connected closed loops (15) each with a member (17) providing a short circuit path. Such members are successively cut and the change in resistance is determined after each cut. This change is compared to certain threshold values to determine the presence or absence of an open circuit fault in each loop. The resistor is then trimmed to its desired value by cutting only the loops where no opens have been discovered.
申请公布号 US4386460(A) 申请公布日期 1983.06.07
申请号 US19810263786 申请日期 1981.05.14
申请人 BELL TELEPHONE LABORATORIES, INCORPORATED 发明人 KLOCKOW, DENNIS H.
分类号 H01C17/23;(IPC1-7):H01C10/00 主分类号 H01C17/23
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