| 摘要 |
Starting from an n-type silicon substrate, after the photolithographic process for producing the silicon dioxide mask for the base and emitter zone diffusions, a photolithographic process is again carried out after applying a photoresist mask in order to produce a window through which boron is implanted to form a p-doped region. After introducing the p-type doping material necessary for the base diffusion, the p-type base zone and a p<+>-type zone, at whose junction with the subsequently introduced n<+>-type emitter zone the zener breakdown takes place, is driven in in a high-temperature process. <IMAGE>
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