| 发明名称 |
Method for determining the etching erosion in plasma etching |
| 摘要 |
In a method for determining the etching erosion in plasma etching, the DC voltage between the anode and cathode of the etching device is measured during plasma etching, and a change in DC voltage detected in the process is used to determine the etching erosion.
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| 申请公布号 |
DE3142333(A1) |
申请公布日期 |
1983.07.14 |
| 申请号 |
DE19813142333 |
申请日期 |
1981.10.26 |
| 申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
GROSHOLZ,RAINER;LAESSING,GERHARD |
| 分类号 |
C23F4/00;G01B7/06;H01J37/32;(IPC1-7):G01B7/00;H01L21/30;H05H1/46 |
主分类号 |
C23F4/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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