Method of using a mask to produce openings in a layer on a substrate

摘要

The invention relates to the production of openings in layers which are situated on substrates, in particular on semiconductor substrates. The invention provides for the application, to the layer to be etched, of a masking layer which is attacked during plasma etching by the etching gas used. The chosen thickness of said masking layer is such that it is not completely removed when the openings are ion-etched. This produces openings with bevelled side walls.