发明名称 NON-VOLATILE STORAGE CIRCUIT
摘要 The present feature relates to a small non-volatile storage circuit allowing power consumption to be reduced while maintaining stable write-in. An NVDFF is provided with a slave latch, the slave latch having a magnetoresistive element connected thereto. Information stored in the slave latch is stored to the magnetoresistive element by writing the information to the magnetoresistive element before power outage, and the information stored in the magnetoresistive element is restored to the slave latch by reading out the information stored in the magnetoresistive element when power is restored. Different routes are used for storing and restoring operations between the slave latch and the magnetoresistive element. The present feature can be applied to a non-volatile storage circuit.
申请公布号 WO2016185903(A1) 申请公布日期 2016.11.24
申请号 WO2016JP63536 申请日期 2016.05.02
申请人 SONY CORPORATION 发明人 USAMI Kimiyoshi;KUDO Masaru
分类号 G11C11/15;G11C11/412;H03K3/356 主分类号 G11C11/15
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