| 摘要 |
The luminescence diode contains a semiconductor body (2) in which, on a p-doped gallium arsenide substrate (4), a highly p-doped epitaxial layer (6) is provided which consists of the gallium/aluminium/arsenic solid solution series in the composition Ga1-xAlxAs and on which a weakly p-doped epitaxial layer (8) is provided which consists of the gallium/aluminium/arsenic solid solution series in the composition Ga1-yAlyAs. According to the invention, magnesium or beryllium are provided as the acceptors of the highly p-doped epitaxial layer (6). The use of magnesium or beryllium as acceptors of the epitaxial layer (6) substantially increases the quantum efficiency of the radiating recombination in the case of red-emitting luminescence diodes which emit at wavelengths of less than 680 nm. <IMAGE>
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