发明名称 |
Conductivity WSi2 films by Pt preanneal layering |
摘要 |
A highly conductive layer utilizing a layer of Pt in conjunction with sputter deposited or co-evaporated WSi2 to enhance the conductivity increase of the WSi2 layer occuring during annealing. The Pt layer is deposited as a thin layer directly on top or beneath the WSi2 layer or may be incorporated within the WSi2 layer. During annealing platinum atoms diffuse into the WSi2 film resulting in lower resistivity values than in comparably deposited annealed film wherein the Pt layer has been omitted.
|
申请公布号 |
US4445134(A) |
申请公布日期 |
1984.04.24 |
申请号 |
US19810318181 |
申请日期 |
1981.11.04 |
申请人 |
IBM CORPORATION |
发明人 |
MILLER, ROBERT J. |
分类号 |
H01L21/285;H01L29/45;H01L29/49;(IPC1-7):H01L23/48;H01L29/46;H01L29/62;H01L29/64 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|