| 摘要 |
The diode (1) has a semiconductor chip (3) fixed between a socket and a head wire (6) by an interconnection layer i.e. solder layer (5), and made from semiconductor material e.g. silicon carbide or gallium nitride. The layer is arranged on a chip front side relative to a chip outer edge, and a circulating, isolating plastic layer (10) is arranged above an interconnection layer-free area of the chip. Another completely circulating, isolating plastic layer (11) overlaps a radial inner-lying end area of the former plastic layer, where the latter plastic layer is made from polyimide. |
