| 摘要 |
1. Method of fabricating a reference diode whose temperature coefficient dV/dT is zero, said reference diode comprising a Zener diode in series with at least one diode with forward junction, characterized in that at least one of said diodes with forward junction is selected to be of the type with recombining electrode, i.e. the thickness of the intermediate layer between junction and electrode of said diode is substantially less than the value of the diffusion length of the minority carriers in said layer, and that the thickness of the intermediate layer is adjusted to render the temperature coefficient of the unit zero. |
