Selective epitaxial growth of gallium arsenide with selective orientation

摘要

A method of fabricating semiconductor devices on semi-insulating GaAs substrates is provided. Pre-etched holes in the substrate are covered with a dielectric which is etched to expose the substrate only at the bottom of the holes. Epitaxial growth of active GaAs in the holes may then proceed with a single crystallographic orientation. The dielectric covering the sidewalls of the holes prevents unwanted random growth and poor surface morphology of the active area.