Device for producing coherent radiation.

摘要

By means of electrons (7) of high energy produced by a semiconductor cathode (3), population inversion is obtained in an active layer (13) of a laser structure (11). In this manner, laser action is obtained, which offers advantages especially with II-VI materials which emit radiation of a wavelength shorter than the usual III-IV materials, and which do not permit the desired population inversion to be obtained in the same manner as in III-V materials, by means of current injection across a pn junction. The semiconductor cathode (3) and the laser structure (2,11) can be both arranged in mutual separation in a vacuum tube (5) or be realized in one semiconductor body. The short-wave laser is especially advantageous for CD, DOR and VLP applications.