Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines

摘要

A process for producing VLSI (very large scale integrated) circuits employs techniques of self-aligned gates and contacts for FET devices. The use of materials in successive layers having different etch characteristics permits selective oxidation of desired portions only of the structure without need for masking and removal of selected material from desired locations by batch removal processes again without use of masking. There results VLSI circuits having increased density and reliability.